SATYANARAYANA, B. V. V.; DURGA PRAKASH, M. Design and Analysis of Heterojunction Tunneling Transistor (HETT) based Standard 6T SRAM Cell. International Journal of Engineering and Technology, [S. l.], v. 7, n. 3.29, p. 8–11, 2018. DOI: 10.14419/ijet.v7i3.29.18450. Disponível em: https://mail.sciencepubco.com/index.php/IJET/article/view/18450.. Acesso em: 17 aug. 2025.